|
|
|
| 论文题目 |
应用于体声波谐振器的ZnO薄膜结构和电学特性 |
| 论文题目（英文） |
Structural and electrical characteristics of ZnO film for application in bulk acoustic wave resonator |
| 作者 |
汤亮 |
| 发表年度 |
2008 |
| 卷 |
14 |
| 期 |
4 |
| 页码 |
821-826 |
| 期刊名称 |
功能材料与器件学报 |
| 摘要 |
采用直流磁控溅射的方法制备了 ZnO压电薄膜 ,并在双面抛光的熔融石英基片上制备了高次谐波体声波谐振器。X射线衍射结果显示 ZnO压电薄膜 C轴择优取向明显 ,衍射峰半高宽为011624° ,显示出较好的结晶质量;扫描电镜分析观察到 ZnO垂直于基片表面的柱形晶粒结构和较平滑的薄膜表面。体声波器件的电学测试结果显示器件具有很好的多模谐振特性 ,说明 ZnO压电薄膜很好地激发出了厚度方向的纵声波 ,可应用于体声波器件和声表面波器件中。另外采用间接的方法得到 ZnO压电薄膜在 870MHz时的介电常数约为 5 . 24,介电损耗因子为 1 . 07,进一步减小介电损耗因子 ,可以提高器件的 Q值。
关键词 :氧化锌薄膜;压电;磁控溅射; X射线衍射;体声波谐振器 |
| 摘要_英文 |
Piezoelectric zinc oxide ( ZnO) thin film was deposited by DC reactive magnetr on sputtering and high overt one bulk acoustic res onat orwas fabricated on double - side polished fused quartz substrate .X -ray diffracti on measurement shows that ZnO film is highly C - axis - oriented with a fullwidth at half maxi mum ( FWHM) 0.1624°which means good crystal quality.Scanning electr on microscopy (SEM) shows the strong columnar structure oriented perpendicular to the smooth surface.The electrical charac2 teristics of high overt one bulk acoustic res onat or show multi - mode res onances, which mean that predominant longitudinal wave is excited by ZnO film. So the ZnO film could be used for applicati ons of bulk acoustic wave devices and surface acoustic wave devices . With an indirectmethod, dielectric constant and dielectric l oss fact or of ZnO fil m at 870MHz were calculated to be about 5.24 and 1.07 respectively.
With the dielectric loss fact or further reduced, Q value of the BAW device would be much higher .
Key words: Zinc oxide; Piezoelectricity; Magnetr on s puttering; X - ray diffracti on; Bulk AcousticWave
Res onat or |
|
|
|
